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1

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

Lelis, A.J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., Goldsman, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 864 KB

english, 2008

2

A Physical Model of High Temperature 4H-SiC MOSFETs

Potbhare, S., Goldsman, N., Lelis, A., McGarrity, J.M., McLean, F.B., Habersat, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.38 MB

english, 2008

3

Propagation velocity uncertainty on GPR SAR processing

Renbiao Wu,, Kunlong Gu,, Jian Li,, Habersat, J., Maksymonko, G.

Journal:

IEEE Transactions on Aerospace and Electronic Systems

Year:

2003

Language:

english

File:

PDF, 2.59 MB

english, 2003

4

Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

Lelis, Aivars J., Green, Ron, Habersat, Daniel B., El, Mooro

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.00 MB

english, 2015

5

Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs

Green, Ronald, Lelis, Aivars J., Habersat, Daniel B.

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 717 KB

english, 2016

6

Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps

Lelis, Aivars J., Green, Ronald, Habersat, Daniel B.

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 324 KB

english, 2016

7

[IEEE 2016 IEEE International Reliability Physics Symposium (IRPS) - Pasadena, CA, USA (2016.4.17-2016.4.21)] 2016 IEEE International Reliability Physics Symposium (IRPS) - Evaluations of threshold voltage stability on COTS SiC DMOSFETs using fast measurements

Habersat, Daniel B., Green, Ronald, Lelis, Aivars J.

Year:

2016

Language:

english

File:

PDF, 476 KB

english, 2016

8

Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments

Habersat, Daniel B., Green, Ronald, Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 732 KB

english, 2017

9

Measurement considerations for evaluating BTI effects in SiC MOSFETs

Habersat, Daniel B., Lelis, Aivars J., Green, Ronald

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 949 KB

english, 2018

10

Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs

Habersat, Daniel B., Lelis, Aivars, Green, Ronald

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 417 KB

2019

11

Chemical and morphological alterations of spines within the hippocampus and entorhinal cortex precede the onset of Alzheimer's disease pathology in double knock-in mice

Chiye Aoki, Veeravan Mahadomrongkul, Sho Fujisawa, Rebecca Habersat, Tomoaki Shirao

Journal:

The Journal of Comparative Neurology

Year:

2007

Language:

english

File:

PDF, 443 KB

english, 2007

12

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

S. S. Hullavarad, R. D. Vispute, B. Nagaraj, V. N. Kulkarni, S. Dhar, T. Venkatesan, K. A. Jones, M. Derenge, T. Zheleva, M. H. Ervin, A. Lelis, C. J. Scozzie, D. Habersat, A. E. Wickenden, L. J. Curr

Journal:

Journal of Electronic Materials

Year:

2006

Language:

english

File:

PDF, 643 KB

english, 2006

13

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast – Techniques

Gurfinkel, M., Xiong, H.D., Cheung, K.P., Suehle, J.S., Bernstein, J.B., Shapira, Y., Lelis, A.J., Habersat, D., Goldsman, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 361 KB

english, 2008

14

SPIE Proceedings [SPIE Aerospace/Defense Sensing, Simulation, and Controls - Orlando, FL (Monday 16 April 2001)] Detection and Remediation Technologies for Mines and Minelike Targets VI - Eyesafe laser-illuminated tripwire (ELIT) detector

Allik, Toomas H., Dawkins, Dalton, Habersat, James D., Nettleton, John E., Writer, Timothy, Buckingham, Christian E., Schoeberlein, Howard C., Nelson, Carl V., Sherbondy, Kelly D., Dubey, Abinash C.,

Year:

2001

Language:

english

File:

PDF, 937 KB

english, 2001

15

AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques

Ravi Bathe, R.D Vispute, Dan Habersat, R.P Sharma, T Venkatesan, C.J Scozzie, Matt Ervin, B.R Geil, A.J Lelis, S.J Dikshit, R Bhattacharya

Journal:

Thin Solid Films

Year:

2001

Language:

english

File:

PDF, 899 KB

english, 2001

16

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Using triangular voltage sweep to detect mobile ions in silicon carbide MOS

Habersat, Daniel B., Lelis, Aivars, Green, Ronald

Year:

2011

Language:

english

File:

PDF, 727 KB

english, 2011

17

SPIE Proceedings [SPIE SPIE Defense, Security, and Sensing - Orlando, Florida (Monday 25 April 2011)] Detection and Sensing of Mines, Explosive Objects, and Obscured Targets XVI - Laser neutralization of buried munitions

Habersat, James D., Schilling, Bradley W., Alexander, Joe, McElhaney, Russell, Lehecka, Thomas, Nixon, Matthew D., Harmon, Russell S., Holloway, Jr., John H., Broach, J. Thomas

Year:

2011

Language:

english

File:

PDF, 1.51 MB

english, 2011

18

SPIE Proceedings [SPIE SPIE Defense, Security, and Sensing - Baltimore, Maryland, USA (Monday 23 April 2012)] Detection and Sensing of Mines, Explosive Objects, and Obscured Targets XVII - Laser neutralization of surface and buried munitions

Habersat, James D., Schilling, Bradley W., Alexander, Joe, Lehecka, Thomas, Broach, J. Thomas, Holloway, John H.

Year:

2012

Language:

english

File:

PDF, 10.57 MB

english, 2012

19

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

Lelis, Aivars J., Habersat, Daniel B., Green, Ronald, Goldsman, Neil

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 287 KB

english, 2009

20

SPIE Proceedings [SPIE AeroSense 2002 - Orlando, FL (Monday 1 April 2002)] Detection and Remediation Technologies for Mines and Minelike Targets VII - SAR processing for GPSAR systems

Gu, Kunlong, Wu, Renbiao, Li, Jian, Bradley, Marshall R., Habersat, James D., Maksymonko, George B., Broach, J. Thomas, Harmon, Russell S., Dobeck, Gerald J.

Year:

2002

Language:

english

File:

PDF, 368 KB

english, 2002

21

Relationship between 4H-SiCâSiO[sub 2] transition layer thickness and mobility

Biggerstaff, T. L., Reynolds, C. L., Zheleva, T., Lelis, A., Habersat, D., Haney, S., Ryu, S.-H., Agarwal, A., Duscher, G.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 3.89 MB

english, 2009

22

Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation

Potbhare, Siddharth, Pennington, Gary, Goldsman, Neil, Lelis, Aivars J., Habersat, Daniel B., McLean, F. Barry, McGarrity, J.M.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 242 KB

english, 2006

23

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - (Invited) Effect of Threshold-Voltage Instability on SiC Power MOSFET High-Temperature Reliability

Lelis, Aivars, Green, Ronald, Habersat, Daniel

Year:

2011

Language:

english

File:

PDF, 163 KB

english, 2011

24

A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs

Green, Ron, Lelis, A.J., El, M., Habersat, D.B.

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 463 KB

english, 2013

25

Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements

Habersat, Daniel B., Lelis, Aivars J., Green, Ronald, El, Mooro

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 312 KB

english, 2013

26

[IEEE 2011 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2011.04.10-2011.04.14)] 2011 International Reliability Physics Symposium - Application of reliability test standards to SiC Power MOSFETs

Green, Ronald, Lelis, Aivars, Habersat, Daniel

Year:

2011

Language:

english

File:

PDF, 573 KB

english, 2011

27

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Investigation of a high temperature oxide-trap activation model for SiC power MOSFETs

Green, Ronald, Lelis, Aivars, Habersat, Daniel, El, Mooro

Year:

2011

Language:

english

File:

PDF, 368 KB

english, 2011

28

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - SiC MOSFET oxide-trap two-way tunneling model

Lelis, Aivars, Habersat, Dan, Green, Ron, Goldsman, Neil

Year:

2011

Language:

english

File:

PDF, 187 KB

english, 2011

29

[IEEE 2008 IEEE International Integrated Reliability Workshop Final Report (IRW) - South lake Tahoe, CA, USA (2008.10.12-2008.10.16)] 2008 IEEE International Integrated Reliability Workshop Final Report - Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability

Lelis, A.J., Green, R., Habersat, D., Goldsman, N.

Year:

2008

Language:

english

File:

PDF, 2.41 MB

english, 2008

30

[IEEE 2006 IEEE International Integrated Reliability Workshop Final Report - South Lake Tahoe, CA, USA (2006.10.16-2006.09.19)] 2006 IEEE International Integrated Reliability Workshop Final Report - Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress

Gurfinkel, M., Suehle, J., Bernstein, J.B., Shapira, Y., Lelis, A.J., Habersat, D., Goldsman, N.

Year:

2006

Language:

english

File:

PDF, 860 KB

english, 2006

31

[IEEE SSP2001. 11th IEEE Workshop on Statistical Signal Processing - Singapore (6-8 Aug. 2001)] Proceedings of the 11th IEEE Signal Processing Workshop on Statistical Signal Processing (Cat. No.01TH8563) - Elimination of leakage and ground-bounce effects in ground-penetrating radar data

Abrahamsson, R., Larsson, E.G., Li, J., Habersat, J., Maksymonko, G., Bradley, M.

Year:

2001

Language:

english

File:

PDF, 542 KB

english, 2001

32

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Structural and Analytical Studies of 4H Silicon Carbide MOSFETs with Thermally Grown Oxides

Zheleva, T., Levin, I., Habersat, D., Lelis, A., Dautrich, M., Lenahan, P.

Year:

2005

Language:

english

File:

PDF, 366 KB

english, 2005

33

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Simulating ion transport and its effects in silicon carbide power MOSFET gate oxides

Habersat, Daniel B., Lelis, Aivars J., Goldsman, Neil

Year:

2013

Language:

english

File:

PDF, 716 KB

english, 2013

34

[IEEE 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Phoenix, AZ, USA (2007.04.15-2007.04.19)] 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Ultra-Fast Characterization of Transient Gate Oxide Trapping in SiC Mosfets

Gurfinkel, M., Suehle, J., Bernstein, J.B., Shapira, Yoram, Lelis, A.J., Habersat, D., Goldsman, N.

Year:

2007

Language:

english

File:

PDF, 1.90 MB

english, 2007

35

[IEEE 2006 IEEE International Integrated Reliability Workshop Final Report - South Lake Tahoe, CA, USA (2006.10.16-2006.09.19)] 2006 IEEE International Integrated Reliability Workshop Final Report - Modeling and Characterization of Bias Stress-Induced Instability of SiC MOSFETs

Lelis, A.J., Potbhare, S., Habersat, D., Pennington, G., Goldsman, N.

Year:

2006

Language:

english

File:

PDF, 192 KB

english, 2006

36

[IEEE 2007 Quantum Electronics and Laser Science Conference - Baltimore, MD, USA (2007.05.6-2007.05.11)] 2007 Quantum Electronics and Laser Science Conference - Absolute surface displacement measurement using pulsed photo-electromotive-force laser vibrometer

Zhongyang Chen,, Jacob Khurgin,, Rodriguez, Ponciano, Lorenzo, Jose, Trivedi, Sudhir, Feng Jin,, Chen-Chia Wang,, Libbey, Brad, Habersat, James

Year:

2007

Language:

english

File:

PDF, 256 KB

english, 2007

37

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - A new ultra-fast charge pumping measurement technique for NIT characterization without relaxation

Habersat, D.B., Gurfinkel, M., Horst, J., Kim, J., Xiong, H.D., Cheung, K., Suehle, J.S., Lelis, A.J., Bernstein, J.B., Shapira, Y.

Year:

2007

Language:

english

File:

PDF, 198 KB

english, 2007

38

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - On-state current stress-induced subthreshold I–V instability in SiC DMOSFETs

Lelis, A., Green, R., Habersat, D., Goldsman, N.

Year:

2009

Language:

english

File:

PDF, 144 KB

english, 2009

39

[IEEE 2007 IEEE International Integrated Reliability Workshop Final Report - South Lake Tahoe, CA, USA (2007.10.15-2007.10.18)] 2007 IEEE International Integrated Reliability Workshop Final Report - Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels

Gurfinkel, M., Jinwoo Kim,, Potbhare, S., Xiong, H.D., Cheung, K.P., Suehle, J., Bernstein, J.B., Shapira, Yoram, Lelis, A.J., Habersat, D., Goldsman, N.

Year:

2007

Language:

english

File:

PDF, 439 KB

english, 2007

40

Implications of Threshold-Voltage Instability on SiC DMOSFET Operation

Lelis, Aivars J., Habersat, Daniel B., Green, Ronald, Goldsman, Neil

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 291 KB

english, 2009

41

[IEEE 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference - Long Beach, CA, USA (2006.05.21-2006.05.26)] 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference - High sensitivity pulsed laser vibrometer for surface vibration monitoring

Rodriguez, Ponciano, Trivedi, Sudhir, Feng Jin,, Lorenzo, Jose, Chen-Chia Wang,, Zhongyang Chen,, Khurgin, Jacob, Libbey, Brad, Habersat, James

Year:

2006

Language:

english

File:

PDF, 318 KB

english, 2006

42

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Time dependence of bias-stress induced threshold-voltage instability measurements

Lelis, A.J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., Goldsman, N.

Year:

2007

Language:

english

File:

PDF, 207 KB

english, 2007

43

[IEEE CLEO 2007 - Baltimore, MD, USA (2007.5.6-2007.5.11)] 2007 Conference on Lasers and Electro-Optics (CLEO) - Absolute Surface Displacement Measurement using Pulsed Photo-Electromotive-Force Laser Vibrometer

Chen, Zhongyang, Khurgin, Jacob, Rodriguez, Ponciano, Lorenzo, Jose, Trivedi, Sudhir, Jin, Feng, Wang, Chen-Chia, Libbey, Brad, Habersat, James

Year:

2007

Language:

english

File:

PDF, 298 KB

english, 2007

44

[IEEE 2008 IEEE International Integrated Reliability Workshop Final Report (IRW) - South lake Tahoe, CA, USA (2008.10.12-2008.10.16)] 2008 IEEE International Integrated Reliability Workshop Final Report - Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability

Lelis, Aivars, Habersat, D., Green, R., Goldsman, N.

Year:

2008

Language:

english

File:

PDF, 978 KB

english, 2008

45

Key Reliability Issues for SiC Power MOSFETs

Lelis, A., Habersat, D., Green, R., Mooro, E.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 297 KB

english, 2013

46

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge

Habersat, Daniel B., Lelis, Aivars J., Potbhare, Siddharth, Goldsman, Neil

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 312 KB

english, 2009

47

Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices

Habersat, Daniel B., Lelis, Aivars J., Green, Ronald

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 993 KB

english, 2012

48

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

Lelis, Aivars J., Habersat, Daniel B., Lopez, G., McGarrity, J.M., McLean, F. Barry, Goldsman, Neil

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 182 KB

english, 2006

49

High-Temperature Reliability of SiC Power MOSFETs

Lelis, Aivars J., Green, Ronald, Habersat, Daniel B.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 342 KB

english, 2011

50

Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V

Habersat, Daniel B., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 623 KB

english, 2011

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